Abstract—In this study, manufacturing cost reduced for CIS
precursor solution from chloride series CuCl2, InCl3, GaCl3
mixed with acetone solvent without binder was discussed. CIS
thin films were coated on a substrate using this precursor
solution prepared at normal temperature and pressure by
Doctor Blade method. We observed that CIS crystals began to
form on the surface at 300°C and the surface and internal faults
were growing with increasing the temperature. The intensity of
main peak increased in CIS absorber layer.
Index Terms—CIS thin film, CuCl2, InCl3, SeCl4 precursor.
The authors are with the Department of Advanced Materials Engineering,
Kumoh National Institute of Technology, Deahak-Ro 61, Gumi, Gyeongbuk
730-701, Korea (e-mail: size4color@empas.com, abidov_kit@yahoo.com,
sjghim@nate.com, dglee@kumoh.ac.kr).
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Cite:You Guk Lee, Amir Abidov, Sungjin Kim, and Dong Gu Lee, "Synthesis and Characterization of CIS Thin Film Using Chloride Solution," International Journal of Materials, Mechanics and Manufacturing vol. 1, no. 4, pp. 388-392, 2013.
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