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General Information
    • ISSN: 1793-8198
    • Frequency: Quarterly
    • DOI: 10.18178/IJMMM
    • Editor-in-Chief: Prof. K. M. Gupta, Prof. Ian McAndrew
    • Executive Editor: Ms. Cherry L. Chen
    • Abstracting/Indexing: EI (INSPEC, IET), Chemical Abstracts Services (CAS), Engineering & Technology Digital Library,  ProQuest, Crossref, Ulrich's Periodicals Directory, DOAJ, and Electronic Journals Library .
    • E-mail ijmmm@ejournal.net
Editor-in-chief
Prof. Ian McAndrew
Embry Riddle Aeronautical University, UK.
It is my honor to be the editor-in-chief of IJMMM. I will do my best to help develop this journal better.

IJMMM 2015 Vol.3(4): 282-286 ISSN: 1793-8198
DOI: 10.7763/IJMMM.2015.V3.211

Silicon Light-Emitting Device with Application in on-Chip Micro-opto-electro-mechanical and Chemical-opto-electro Micro Systems

Kaikai Xu, Lukas W. Snyman, Jean-Luc Polleux, Hongda Chen, and Guannpyng Li
Abstract—The advances in silicon photonics related device development have been evolved into standard complementary metal-oxide-semiconductor (CMOS) technology in recent years. The emission of visible light (400-900 nm) by a monolithically integrated silicon p-n junction under reverse bias presents the silicon light-emitting device (Si-LED). As an integrated optical source, it is then developed for coupling light into the optic waveguide. Through the Monte Carlo and Rsoft BeamPROP simulations, the vertical emission, focusing, refraction, splitting and wave-guiding are also optimized using the same CMOS technology. Since the Si-LED, the SiO2-waveguide, and the Si-photodetector can be monolithically integrated on the same bulk-Si substrate, a concise micro-opto-electro-mechanical systems (MOEMS) could be realized in the modern CMOS structural & integrated circuitry standard platform.

Index Terms—Silicon LED, micro-opto-electro-mechanical systems, waveguide, CMOS technology, monolithic integration.

K. Xu is with the the State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 China (e-mail: kaikaix@uestc.edu.cn).
L. Snyman is with the Department of Electrical and Mining Engineering, University of South Africa, Pretoria 0001 South Africa (e-mail: snymalw@unisa.ac.za).
J. Polleux is with the University Paris-Est, ESYCOM, ESIEE Paris, Le Cnam, UPEM, Cite Descartes, Noisy-Le-Grand-Cedex 93162 France (e-mail: jean-luc.polleux@esiee.fr).
H. Chen is with the State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 China (e-mail: hdchen@semi.ac.cn).
G. Li is with the California Institute for Telecommunications and Information Technology, Irvine 92697 California, USA. (e-mail: gpli@uci.edu).

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Cite: Kaikai Xu, Lukas W. Snyman, Jean-Luc Polleux, Hongda Chen, and Guannpyng Li, "Silicon Light-Emitting Device with Application in on-Chip Micro-opto-electro-mechanical and Chemical-opto-electro Micro Systems," International Journal of Materials, Mechanics and Manufacturing vol. 3, no. 4, pp. 282-286, 2015.

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