Abstract—Chemical mechanical polishing (CMP) of polysilicon (poly-Si) films is an essential process in fabricating integrated circuit (IC) devices for high-performance dynamic random access memory (DRAM) and microelectromechanical systems (MEMS) with multi-level structures. Poly-Si films can have changes in surface roughness and grain boundary density (or Young’s modulus) through thermal annealing treatment, which exerts a strong influence on poly-Si polishing performance (i.e., uniformity). Here, poly-Si films, after annealing for half hour at 1,050°C under nitrogen atmosphere, are polished to characterize the effect of annealing treatment on their material removal rate (MRR). The dependence of the surface roughness, grain boundary density, and Young’s modulus of poly-Si films on annealing treatment is also intensively discussed. The results from this study will help us to establish optimal conditions for poly-Si CMP process.
Index Terms—Annealing, CMP, material removal rate, polysilicon.
S. Park and S.-H. Yoon are with the Department of Mechanical Engineering, Inha University, Incheon 402-751, Republic of Korea (e-mail: shyoon@inha.ac.kr).
H. Jeong is with the Department of Precision and Mechanical Engineering, Pusan National University, Busan 609-735, Republic of Korea.
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Cite: Sungmin Park, Haedo Jeong, and Sang-Hee Yoon, "The Dependence of Material Removal Rate on Annealing Treatment in Polysilicon CMP," International Journal of Materials, Mechanics and Manufacturing vol. 4, no. 2, pp. 115-118, 2016.
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