Abstract—In this work, CrN films were deposited on Si substrates with a Cr buffer layer (CrN/Cr films) by RF magnetron sputtering. The structure, surface morphology, chemical composition, high temperature oxidation resistance and resistivity were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS) and four-probe resist tester, respectively. The lattice constant of the CrN/Cr films with a (111) preferred orientation was estimated to be about 4.1336 Å. After high temperature heat treatment, the surface morphology of CrN/Cr films changed obviously, and the electrical properties of CrN/Cr films were improved. Our results can provide an important reference in the high temperature oxidation resistance research for CrN films.
Index Terms—Rf magnetron sputtering, metal buffer layer, electrical properties, oxidation resistance.
Jia-Xin Zhang and Guang-Rui Gu are with the Department of Physics, College of Science, Yanbian University, Yanji 133002, China(*Corresponding author: Guang-Rui Gu; e-mail: 986016416@qq.com, grgu@ybu.edu.cn).
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Cite: Jia-Xin Zhang, Mei-Jie Zhang, Guang-Rui Gu, and Bao-Jia Wu, "High Temperature Oxidation Resistance and Electrical Properties of CrN/Cr Films Prepared by RF Magnetron Technology," International Journal of Materials, Mechanics and Manufacturing vol. 7, no. 2, pp. 82-85, 2019.
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