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General Information
    • ISSN: 1793-8198 (Print)
    • Abbreviated Title: Int. J. Mater. Mech. Manuf.
    • Frequency: Bimonthly
    • DOI: 10.18178/IJMMM
    • Editor-in-Chief: Prof. K. M. Gupta; Prof. Ian McAndrew
    • Executive Editor: Cherry L. Chen
    • Abstracting/Indexing: EI (INSPEC, IET), Chemical Abstracts Services (CAS),  ProQuest, Crossref, Ulrich's Periodicals Directory,  EBSCO.
    • E-mail ijmmm@ejournal.net

Editor-in-chief
Prof. Ian McAndrew
Capitol Technology University, USA
It is my honor to be the editor-in-chief of IJMMM. I will do my best to work with the editorial team and help make this journal better.

IJMMM 2019 Vol.7(2): 100-104 ISSN: 1793-8198
DOI: 10.18178/ijmmm.2019.7.2.439

A Study on Hot Carrier Reliability of Radiation Hardened H-gate PD SOI NMOSFET after Gamma Radiation

Jinghao Zhao, Xuefeng Yu, Jiangwei Cui, Qiwen Zheng, Hang Zhou, and Qi Guo
Abstract—Reliability of space applied micro/nanometer devices are simultaneously facing space radiation environment and own reliability issues such as HCI(hot carrier injection)effect. To clarify the effect of mature RH (radiation hardened) technology for deep submicron device on its hot carrier reliability, the author performed gamma irradiation and hot carrier stress on RH H-Gate PD (partially depleted) SOI NMOS and commercial strip-shaped gate PD SOI NMOS as control group. He makes a detailed analysis on hot carrier reliability and reaches a conclusion that compared to irradiated strip-shaped gate devices, HCI effect is partly improved in irradiated RH H-gate. On the other hand, in comparison with unirradiated RH H-gate devices, there’s still enhanced HCI degradation in irradiated ones. Mechanism is explained as the coupling effect between front gate and back gate caused by TID (total ionizing dose effect) induced charge trapping in buried oxide.

Index Terms—Reliability, NMOS, hot carrier injection, total dose effect.

Jinghao Zhao is with Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China 830011 and University of Chinese Academy of Sciences, Beijing, China 100049(e-mail: 1120830202@hit.edu.cn).
Hang Zhou was with Microsystem and Terahertz Research Center & Institute of Electronic Engineering, China Academic of Engineering Physics, Mianyang, China 621900.
Xuefeng Yu, Jiangwei Cui, Qiwen Zheng, Ying Wei, and Qi Guo is with Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China 830011 and Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, China 83001.

[PDF]

Cite: Jinghao Zhao, Xuefeng Yu, Jiangwei Cui, Qiwen Zheng, Hang Zhou, and Qi Guo, "A Study on Hot Carrier Reliability of Radiation Hardened H-gate PD SOI NMOSFET after Gamma Radiation," International Journal of Materials, Mechanics and Manufacturing vol. 7, no. 2, pp. 100-104, 2019.

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