Article# | Article Title & Authors | Page |
431 |
Long Huang
|
63 |
432 |
Yasuo Kondo, Yuko Itoh, Mitsugu Yamaguchi, Satoshi Sakamoto, and Kenji Yamaguchi
|
68 |
433 |
Juan José Encinas C. and Mario Chauca
|
72 |
434 |
An-Tian Du, Zhi-Peng San, Guang-Rui Gu, and Bao-Jia Wu
|
77 |
435 |
Jia-Xin Zhang, Mei-Jie Zhang, Guang-Rui Gu, and Bao-Jia Wu
|
82 |
436 |
Harvey L. Kangley, Simon M. Barrans, and Mark A. Newton
|
86 |
437 |
Kaona Jongwuttanaruk, Prayoon Surin, and Fasai Wiwatwongwana
|
91 |
438 |
Fang-Lin Chao, Ching-Lin Lu, and Je-Ming Lin
|
95 |
439 |
A Study on Hot Carrier Reliability of Radiation Hardened H-gate PD SOI NMOSFET after Gamma Radiation
Jinghao Zhao, Xuefeng Yu, Jiangwei Cui, Qiwen Zheng, Hang Zhou, and Qi Guo
|
100 |
440 |
Jinyang Zhang, Maisheng Li, Xiao Zhang, and Xianshuai Chen
|
105 |
441 |
Marlena Wróbel and Jacek Kalina
|
110 |
442 |
Ashwin Polishetty and Guy Littlefair
|
114 |